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LBD1B2A-XX doc. no : qw0905- rev. : a date : - 2006 20 - apr. LBD1B2A-XX data sheet ligitek electronics co.,ltd. property of ligitek only bar digit led display
note : 1.all dimension are in millimeters and (lnch) tolerance is 0.25mm unless otherwise noted. 2.specifications are subject to change without notice. LBD1B2A-XX part no. package dimensions page 1/10 ligitek electronics co.,ltd. property of ligitek only LBD1B2A-XX ligitek 2.54x10=25.4 (1.0") 45.5(1.791") 4.9x8=39.2(1.543") pin no.1 1.5 (0.059") 7.7 (0.303") 5.5 (0.217") y g y g 2.0 (0.079") 6.0 (0.236") 4.0 (0.157") r e e e 4.0 (0.157") e 1.0min 3.2 0.5 ? 0.45 typ
ligitek electronics co.,ltd. property of ligitek only internal circuit diagram 2/10 page 1, LBD1B2A-XX 3 2 5 4 8 7 69 11 10 hys ug hys ug hrf hehehe he LBD1B2A-XX part no.
ligitek electronics co.,ltd. property of ligitek only electrical connection 3/10 page cathode yellow 3 cathode green cathode yellow cathode orange cathode red cathode orange cathode orange 8 10 9 6 7 4 5 common anode cathode green pin no.1 1 2 LBD1B2A-XX 10 common anode cathode orange LBD1B2A-XX part no.
peak forward current perchip (duty 1/10,0.1ms pulse width) forward current per chip operating temperature storage temperature part no note : 1.the forward voltage data did not including 0.1v testing tolerance. 2. the luminous intensity data did not including 15% testing tolerance. reverse current per any chip power dissipation per chip absolute maximum ratings at ta=25 solder temperature 1/16 inch below seating plane for 3 seconds at 260 part selection and application information(ratings at 25) (nm) emitted algainp red material chip 630 20 common cathode or anode d ( nm) typ. 35 1.51.721.5 2.4 electrical max. min. typ. vf(v) min. iv(mcd) 2:1 iv-m tstg t opr pd ir parameter i fp i f symbol -40 ~ +85 -40 ~ +85 75 2000 mw a unit 60 30 ratings hys ma ma ligitek electronics co.,ltd. property of ligitek only 4/10 page hrf 30 90 75 ug 30 120 100 electrostatic discharge( * ) a esd 10 58715 1.72.1 2.621.535 2:1 574201.72.12.610.518 2:1 algainp yellow algainp green LBD1B2A-XX common anode he 30 60 75 2:1 algainp orange 620 171.72.1 2.610.521.5 LBD1B2A-XX part no.
symbol iv-m spectral line half-width reverse current any chip luminous intensity matching ratio parameter luminous intensity per chip dominant wavelength forward voltage per chip ir a nm vr=5v if=20ma iv d vf mcd nm volt unit if=10ma if=20ma if=20ma test condition test condition for each parameter ligitek electronics co.,ltd. property of ligitek only page 5/10 LBD1B2A-XX part no.
fig.3 forward voltage vs. temperature fig.5 relative intensity vs. wavelength ambient temperature( ) wavelength (nm) r e l a t i v e i n t e n s i t y @ 2 0 m a 0.0 500550 0.5 f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 1.0 -20 -40 0.8 40 020 1.1 1.0 0.9 1.2 650 600 ambient temperature( ) fig.4 relative intensity vs. temperature r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 0.5 -40 100 80 60 0.0 0 -20 4060 20 1.5 1.0 2.0 2.5 3.0 80100 forward voltage(v) fig.1 forward current vs. forward voltage typical electro-optical characteristics curve f o r w a r d c u r r e n t ( m a ) 100 2.0 1.0 0.1 3.0 1.0 10 ug chip 1000 6/10 page fig.2 relative intensity vs. forward current r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a 1.0 4.05.0 0.0 0.5 1.0 1.5 2.0 forward current(ma) 10100 2.5 3.0 1000 ligitek electronics co.,ltd. property of ligitek only LBD1B2A-XX part no.
fig.3 forward voltage vs. temperature fig.5 relative intensity vs. wavelength ambient temperature( ) r e l a t i v e i n t e n s i t y @ 2 0 m a wavelength (nm) f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 fig.4 relative intensity vs. temperature ambient temperature( ) r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 typical electro-optical characteristics curve forward voltage(v) fig.1 forward current vs. forward voltage f o r w a r d c u r r e n t ( m a ) forward current(ma) fig.2 relative intensity vs. forward current r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a ligitek electronics co.,ltd. property of ligitek only 1.0 0.1 1.0 10 100 1000 1.0101001000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40-200204060 1.0 1.1 1.2 500 550 600 0.0 0.5 1.0 1.52.02.53.0 80100 0.8 0.9 -20 -40 40 20 080100 60 2.0 0.0 0.5 1.0 1.5 2.5 3.0 650 hys chip page7/10 LBD1B2A-XX part no.
1.5 1.0 0.5 0.0 2.0 fig.4 relative intensity vs. temperature r e l a t i v e i n t e n s i t y @ 2 0 m a wavelength (nm) 550 0.0 0.5 600 650 700 ambient temperature( ) fig.5 relative intensity vs. wavelength fig.3 forward voltage vs. temperature f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 1.0 -40 0.8 -20 1.1 0.9 1.0 1.2 r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 20 060 40100 80 20 ambient temperature( ) -20 -40 060 4080100 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 ligitek electronics co.,ltd. property of ligitek only fig.2 relative intensity vs. forward current typical electro-optical characteristics curve 1.5 fig.1 forward current vs. forward voltage forward voltage(v) 100 f o r w a r d c u r r e n t ( m a ) 1.0 0.1 1.0 10 he chip 1000 r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a 2.02.53.0 8/10 page 1000 forward current(ma) 1.010100 LBD1B2A-XX part no.
1.0 f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 40 ambient temperature( ) 650700 550600 wavelength (nm) ambient temperature( ) fig.5 relative intensity vs. wavelength 1.0 0.5 r e l a t i v e i n t e n s i t y @ 2 0 m a 0 0.9 0.8 -0 -40-202040 100 6080 0 -40-20 0.5 -0206080100 ligitek electronics co.,ltd. property of ligitek only fig.2 relative intensity vs. forward current forward current(ma) fig.4 relative intensity vs. temperature 3.0 f o r w a r d c u r r e n t ( m a ) forward voltage(v) fig.3 forward voltage vs. temperature 1.2 1.1 1.0 10 1.0 0.1 100 1.01.52.0 1.5 2.0 2.5 3.0 r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a 3.0 2.51.0 0.5 0 10 2.0 1.5 1.0 2.5 typical electro-optical characteristics curve fig.1 forward current vs. forward voltage hrf chip 1000 3.5 1000 100 page 9/10 LBD1B2A-XX part no.
the purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. 1.ta=105 5 &-40 5 (10min) (10min) 2.total 10 cycles mil-std-202: 107d mil-std-750: 1051 mil-std-883: 1011 solderability test solder resistance test this test intended to see soldering well performed or not. this test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. 1.t.sol=230 5 2.dwell time=5 1sec 1.t.sol=260 5 2.dwell time= 10 1sec. mil-std-202: 208d mil-std-750: 2026 mil-std-883: 2003 jis c 7021: a-2 mil-std-202: 210a mil-std-750: 2031 jis c 7021: a-1 ligitek electronics co.,ltd. property of ligitek only the purpose of this test is the resistance of the device under tropical for hours. reliability test: high temperature high humidity test thermal shock test low temperature storage test high temperature storage test operating life test test item the purpose of this is the resistance of the device which is laid under condition of high temperature for hours. the purpose of this is the resistance of the device which is laid under condition of low temperature for hours. 1.ta=65 5 2.rh=90%~95% 3.t=240hrs 2hrs 1.ta=-40 5 2.t=1000 hrs (-24hrs, +72hrs) 1.under room temperature 2.if=10ma 3.t=1000 hrs (-24hrs, +72hrs) 1.ta=105 5 2.t=1000 hrs (-24hrs, +72hrs) test condition this test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. description mil-std-202:103b jis c 7021: b-11 jis c 7021: b-12 mil-std-750: 1026 mil-std-883: 1005 jis c 7021: b-1 mil-std-883:1008 jis c 7021: b-10 reference standard page10/10 LBD1B2A-XX part no.

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